Automotive Power Integration Module for Next Generation Automotive Brushless DC Systems

On Semi's STK984-190-E is a Automotive Power Integration Module (PIM) for the next generation of automotive brushless DC systems, consisting of six 40 V/30 A MOSFETs configured as a three-phase bridge and an additional 40 V /30 A high-side reverse battery protection MOSFET. The module is suitable for 12 V automotive motor drive applications with rated power up to 300 W, such as electric pumps, fans and windshield wipers. Operating temperature range is -40 ° C to 150 ° C. All integrated MOSFETs are AEC-Q101 certified. This article describes the main features of STK984-190-E, block diagram, typical application circuit, and 40V 30A DIP MOSFET power module evaluation board STK984-190-EGEVB main features, circuit diagrams, materials Checklist and PCB design drawings.

The STK984-190-E is a MOSFET power module containing 6 MOSFETsin a three-phase bridge (B6) configuraTIon and a seventh MOSFET usedas a reverse battery protecTIon switch. The compact module is 29.6 mmx18.2 mm and is 4.3 mm high (see Package drawing for specificaTIondetails). The MOSFET module uses a DBC substrate for excellent thermal performance. The module is suitable for 12 V automoTIve andindustrial applications with motors rated up to 300 W.

Main features of STK984-190-E:

Three-phase MOSFET bridge with reverse battery protection switch

Device is PPAP capable.

Compact 29.6 mmx18.2 mm dual in-line package

Motor power up to 300 W for 12 V systems

40 V MOSFETs with 30 A continuous and 85 A pulse current ratings

RDS(ON) = 9.5 mohmmax

QGD = 9.8 nC typical

STK984-190-E application:

Automotive Pumps

Automotive Fans

12 V Industrial Motors

Figure 1. Functional Block Diagram of STK984-190-E

Figure 2. STK984-190-E application case circuit diagram

Evaluation Board STK984-190-EGEVB: 40V 30A DIP MOSFET Power Module Evaluation Board

The STK984-190-EGEVB is designed to evaluate the STK984-190E, a MOSFET power module containing 6 MOSFETs in a three-phase bridge (B6) configuration and a seventh MOSFET used as a reverse battery protection switch. The MOSFET module uses a DBC Substrate for excellent thermal performance and is suitable for 12 V automotive and industrial applications with motors rated up to 300 W.

Figure 3. Outline drawing of the evaluation board STK984-190-EGEVB

Figure 4. Evaluation board STK984-190-EGEVB circuit diagram

Evaluation Board STK984-190-EGEVB Bill of Materials:

Figure 5. Evaluation Board STK984-190-EGEVB PCB Design